Aerosol assisted chemical vapor deposition of conductive and photocatalytically active tantalum doped titanium dioxide films

Aerosol assisted chemical vapor deposition of conductive and photocatalytically active tantalum doped titanium dioxide films
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DOI:
10.1039/c4ta01618a
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发表时间:
2014-08-28
影响因子:
11.9
通讯作者:
Parkin, Ivan P.
Parkin, Ivan P.
中科院分区:
材料科学2区
文献类型:
--
作者:
Bawaked, Salem M.;Sathasivam, Sanjayan;Parkin, Ivan P.

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本文介绍了气溶胶辅助化学气相沉积法制备透明、蓝色和导电的掺钽二氧化钛薄膜的方法,这些薄膜是由Ti(OEt)(4)和Ta(OEt)(5)的CVD反应得到的。霍尔效应测量显示掺杂的薄膜具有优异的n型导电性,据我们所知,Ta掺杂的TiO 2的最低报道薄层电阻为14 Ω sq(-1)。Ta 6原子%掺杂的TiO 2薄膜也显示出最佳的电学结果,其电荷载流子浓度为1.60 × 10(21)cm(-3),迁移率为1.44 cm(2)V-1 s(-1),使其成为光伏器件中的合适电极。掺杂薄膜具有多功能性,在紫外光照射下表现出良好的光催化活性。XPS和XRD研究给出了强有力的证据,Ta作为Ta 5+进入TiO 2晶格,并且观察到一些Ti 4+还原为Ti 3+。
This paper shows the aerosol assisted chemical vapour deposition of transparent, blue coloured and conductive tantalum doped titanium dioxide films from the CVD reaction of Ti(OEt)(4) and Ta(OEt)(5). Hall effect measurements showed the doped films to have excellent n-type electrical conductivity showing, to the best of our knowledge, the lowest reported sheet resistance ever recorded for Ta-doped TiO2 of 14 Omega sq(-1). The Ta 6 atom% doped TiO2 film also showed the best electrical results with a charge carrier concentration of 1.60 x 10(21) cm(-3) and mobility of 1.44 cm(2) V-1 s(-1) making it a suitable electrode in photovoltaic devices. The doped films were multifunctional, showing good photocatalytic activity under UV-light illumination. XPS and XRD studies gave strong evidence that the Ta was entering the TiO2 lattice as Ta5+ and that a reduction of some Ti4+ to Ti3+ was observed.