A cryogenic low-background low-noise CMOS preamplifier for HPGe detectors
A cryogenic low-background low-noise CMOS preamplifier for HPGe detectors
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DOI：
10.1088/1748-0221/17/06/p06018
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发表时间：
2022-06
影响因子：
1.3
通讯作者：
J. Hao;L. He;Z. Deng
中科院分区：
文献类型：
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作者：
J. Hao;L. He;Z. Deng
研制成功了一种低温低噪声CMOS晶体管，用于HPGe探测器的低本底实验。去除了常用的辅助片外器件，如去耦电容和电阻，以控制放射性发射。原型芯片采用XFAB 350 nm CMOS工艺实现，并进行了全面的评估。在77 K下，在12 μs的整形时间内，获得了最小的8.9个电子的ENC，通过1米长的电缆测量的上升时间为60 ns。比较了有无去耦电容对电源电压和偏置电压的影响，发现两者没有明显差异。还测量了连接到0.5 kg点接触HPGe检测器时的性能。最小ENC为15.5电子。获得了57Co辐射源的能谱，测得122keV能峰的半高宽为0.6keV。
A cryogenic low-noise CMOS preamplifier has been successfully developed for HPGe detectors in low-background experiments. Commonly used auxiliary off-chip devices, such as decoupling capacitors and resistors, were removed to control the radioactive emission. The prototype chip was implemented in XFAB 350 nm CMOS process and was fully evaluated. A minimum ENC of 8.9 electrons was obtained at a 12 μs shaping time at 77 K, and the rise time was measured to be 60 ns through a 1-meter-long cable. The performances with and without decoupling capacitors for the power supply and bias voltages were compared, and there was no evident difference between these cases. The performance upon connection to a 0.5 kg point-contact HPGe detector was also measured. A minimum ENC of 15.5 electrons was achieved. The energy spectrum of the 57Co radiation source was obtained, and the FWHM of the 122 keV energy peak was measured to be 0.6 keV.