Asymmetric transport property of fluorinated graphene
Asymmetric transport property of fluorinated graphene
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DOI：
10.1063/1.4823798
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发表时间：
2013-10
影响因子：
4
通讯作者：
K. Tahara;T. Iwasaki;S. Furuyama;A. Matsutani;M. Hatano
中科院分区：
文献类型：
--
作者：
K. Tahara;T. Iwasaki;S. Furuyama;A. Matsutani;M. Hatano
研究了不同掺杂量的氟化石墨烯的载流子输运性质。在稀释的氟化石墨烯中观察到从绝缘到金属导电的转变的开始。高度氟化的石墨烯在输运性质上显示出电子-空穴不对称性，并且在空穴传导区域处显示出局部电阻率最大值，这可能是由共振氟杂质的存在引起的。在去除氟原子并通过热退火产生结构缺陷后，不对称特征发生急剧变化。这些结果表明，石墨烯中的杂质或缺陷的类型可以通过检查传输特性的不对称性来检测。
Carrier transport properties of fluorinated graphene with various fluorination rates are presented. Onset of transition from insulating to metallic conduction is observed in dilute fluorinated graphene. Highly fluorinated graphene shows electron-hole asymmetry in transport properties and local resistivity maximum at the hole conduction region, which are presumably caused by the existence of resonant fluorine impurities. Drastic change of the asymmetric feature occurs after removing fluorine atoms and creating structural defects by thermal annealing. These results suggest that the type of impurities or defects in graphene is detectable by examining asymmetry in transport properties.