Fabrication of SnS2/SnS heterojunction thin film diodes by plasma-enhanced chemical vapor deposition
Fabrication of SnS2/SnS heterojunction thin film diodes by plasma-enhanced chemical vapor deposition
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DOI：
10.1016/j.tsf.2004.11.012
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发表时间：
2005-06-01
期刊：
影响因子：
2.1
通讯作者：
Ortiz, A
中科院分区：
文献类型：
--
作者：
Sánchez-Juárez, A;Tiburcio-Silver, A;Ortiz, A
采用等离子体增强化学气相沉积（PECVD）方法制备了SnS和SnS 2异质结。通过在电容耦合RF等离子体沉积室中分解气体前体SnCl 4和HAS获得半导体材料SnS和SnS。使用具有透明导体氧化物（TCO）薄膜的康宁玻璃作为衬底。二极管的结构为玻璃/TCO/n型SnS_2/p型SnS/Al，n型和p型Sn-S化合物之间的接触为整流接触。反向饱和密度电流估计值为1.2 × 10 ~（-5）A/cm ~ 2。在-1.0至1.0 V的施加电压范围内，正向电流与反向电流之比超过300，估计二极管系数为2.7。在照明下观察到光伏效应，给出0.35V的开路电压和1.5mA/cm（2）的小短路电流密度。(c)2004年由Elsevier B. V.出版
Heterojunction based on Sn-S compounds, SnS and SnS2, have been prepared by plasma-enhanced chemical vapor deposition (PECVD). The semiconductor materials SnS and SnS, were obtained by the decomposition of the gas precursors SnCI4 and HAS in a capacitive-coupled RF plasma-deposition chamber. Corning glass with a transparent conductor oxide (TCO) thin film was used as substrate. The structure of the diode was glass/TCO/n-type SnS2/p-type SnS/Al. The contact between the n-type and p-type Sn-S compounds was found to be rectifying. The estimate reverse saturation density current was 1.2 x 10(-5) A/cm(2). The ratio of forward-to-reverse current exceeded 300 within the range of applied voltages of -1.0 to 1.0 V and the estimated diode factor was 2.7. A photovoltaic effect was observed under illumination giving an open circuit voltage of 0.35 V and a small short circuit current density with a value of 1.5 mA/cm(2). (c) 2004 Published by Elsevier B.V.