Self-assembled semiconductor structures: Electronic and optoelectronic properties
Self-assembled semiconductor structures: Electronic and optoelectronic properties
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DOI：
10.1109/3.687862
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发表时间：
1998-07-01
影响因子：
2.5
通讯作者：
Singh, J
中科院分区：
文献类型：
--
作者：
Jiang, HT;Singh, J
应变外延已被证明可以通过单步外延产生碟形半导体点结构，这些点的非常高的密度（接近每晶片的兆兆点）和它们不断提高的均匀性表明这些特征在未来的微电子学中可能具有重要的应用。因此，了解这些量子点的结构和电子特性非常重要。在本文中，我们研究了一些物理控制的设备，可以从这样的结构的性能。自组装量子点是高度应变的，我们将使用价力场模型来研究这些量子点中的应变张量。在本文中，我们将解决以下问题：1）自组装量子点中应变张量的一般性质是什么？2)InAs-GaAs量子点的电子和空穴谱是什么？3)自组装量子点中重要的子带间辐射和非辐射散射过程是什么？特别地，我们将讨论如何在量子点结构中修改电子-声子相互作用。将简要讨论非冷却子带间器件，如激光器，探测器和量子晶体管的后果。
Strained epitaxy has been shown to produce pyramidal-shaped semiconductor dot structures by single-step epitaxy, The very high density of these dots (approaching teradots per wafer) and their ever improving uniformity suggest that these features could have important applications in future microelectronics. Understanding the structural and electronic properties of these quantum dots is therefore of great importance. In this paper, we examine some of the physics controlling the performance of devices that could be made from such structures. The self-assembled quantum dots are highly strained and we will examine the strain tensor in these quantum dots using a valence force-field model. In this paper we will address the following issues, 1) What is the general nature of the strain tensor in self assembled quantum dots? 2) What are the electron and hole spectra for InAs-GaAs quantum dots? 3) What are the important intersubband radiative and nonradiative scattering processes in the self assembled quantum dots? In particular, we will discuss how the electron-phonon interactions are modified in the quantum dot structures. Consequences for uncooled intersubband devices such as lasers, detectors, and quantum transistors will be briefly discussed.