Interfacial energies of textured silicon iron in the presence of oxygen
Interfacial energies of textured silicon iron in the presence of oxygen
复制标题
有氧条件下织构硅铁的界面能
DOI：
10.1080/14786436808223024
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发表时间：
1968
期刊：
影响因子：
--
通讯作者：
L. Stuart
中科院分区：
文献类型：
--
作者：
E. D. Hondros;L. Stuart
摘要 测量了硅铁的绝对表面和晶界能，作为块体硅含量、受控气氛的氧势和温度的函数。在 1410°c 时，Fe-3% Si 自由表面的硅浓度约为 13%。类似的硅富集发生在晶界处。到目前为止，最重要的影响是氧吸附，它严重降低了表面能，1330°c 时单分子层的饱和表面覆盖率为 0·47。当氧势大于等于pH2O/pH2=10−4时，由于氧在(100)平面上的优先吸附，薄箔上会形成(100)二次重结晶织构。当 pH2O/pH2 < 10−4 时，箔片呈现 (110) 纹理。另外，清洁表面的表面能温度系数为-0·36 ergs cm-2°c-1，在存在氧吸附的情况下变为正值且等于0·55 ergs cm-2°c-1。当前观察结果与第二个观察结果的相关性...
Abstract Absolute surface and grain boundary energies have been measured on silicon iron as a function of bulk silicon content, oxygen potential of the controlled atmosphere and temperature. At 1410°c, the silicon concentration at the free surface of Fe–3% Si is approximately 13%. A similar silicon enrichment occurs at grain boundaries. By far the most important effect is that of oxygen adsorption, which reduces the surface energy severely, the saturation surface coverage at 1330°c being 0·47 of a monolayer. An oxygen potential greater than that equivalent to pH2O/pH2=10−4 develops a (100) secondary recrystallization texture on thin foils, by virtue of the preferential adsorption of oxygen on (100) planes. At pH2O/pH2 < 10−4, the foils show a (110) texture. In addition, the temperature coefficient of surface energy which is -0·36 ergs cm−2°c−1 for a clean surface, becomes positive and equal to 0·55 ergs cm−2°c−1 in the presence of oxygen adsorption. The relevance of the present observations to the seconda...