Coupling of InGaN quantum-well photoluminescence to silver surface plasmons
Coupling of InGaN quantum-well photoluminescence to silver surface plasmons
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DOI：
10.1103/physrevb.60.11564
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发表时间：
1999-10-15
影响因子：
3.7
通讯作者：
DenBaars, SP
中科院分区：
文献类型：
--
作者：
Gontijo, I;Boroditsky, M;DenBaars, SP
利用银表面等离子体激元与氮化镓带隙之间激发能的一致性，将半导体自发发射耦合到金属表面等离子体激元中。一个3纳米的InGaN/GaN量子阱（QW）位于距离8纳米银紫外光12纳米处，在表面等离子体边缘场深度范围内。光谱上尖锐的光致发光倾角（约为55倍）表明，由于半导体量子阱和表面等离子激元电场之间的空间重叠，电子空穴能量正在迅速转移到等离子激元激发。因此，表面等离子体的自发发射比InGaN量子阱的正常自发发射快约55倍。如果在金属薄膜中加入有效的天线结构，则可以相应提高外部发光效率。[s0163 - 1829(99) 08939 - 0]。
The coincidence in excitation energy between surface plasmons on silver and the GaN band gap is exploited to couple the semiconductor spontaneous emission into the metal surface plasmons. A 3-nm InGaN/GaN quantum well (QW) is positioned 12 nm from an 8-nm silver laver, well within the surface plasmon fringing field depth. A spectrally sharp photoluminescence dip, by a factor approximate to 55, indicates that electron-hole energy is being rapidly transferred to plasmon excitation, due to the spatial overlap between the semiconductor QW and the surface plasmon electric field. Thus, spontaneous emission into surface plasmons is approximate to 55 times faster than normal spontaneous emission from InGaN quantum wells. If efficient antenna structures can he incorporated into the metal film, there could be a corresponding increase in external light emission efficiency. [S0163-1829(99)08939-0].