Simulations of charge transfer in Electron Multiplying Charge Coupled Devices
Simulations of charge transfer in Electron Multiplying Charge Coupled Devices
复制标题
电子倍增电荷耦合器件中电荷转移的模拟
DOI：
10.1088/1748-0221/9/12/c12042
复制
发表时间：
2014
影响因子：
1.3
通讯作者：
A. Holland
中科院分区：
文献类型：
--
作者：
N. Bush;Konstantin D. Stefanov;David J. Hall;Douglas Jordan;A. Holland
电子倍增电荷耦合器件（EMCCD）是传统CCD技术的一种变体，非常适合需要在弱光条件下高速运行的应用。片内信号放大使传感器能够有效地抑制读出电子器件引入的噪声，允许以MHz像素速率读取子电子噪声。这些器件已经成为许多关于其操作的详细研究的主题，但是还没有研究EMCCD增益寄存器内的传输和乘法过程。这样的调查有可能解释某些观察到的性能特征，并为进一步优化其操作提供信息。在这项研究中，从模拟EMCCD增益寄存器元件内的电荷转移的结果进行了讨论，特别侧重于串行电荷转移效率（CTE）的影响。工作电压和读出速度的影响进行了探讨，在典型的操作条件的上下文中。它示出，在传输过程中，一小部分的信号电荷可能会被困在超导体-绝缘体接口，可以采取行动，以降低在某些操作条件下的串行CTE。
Electron Multiplying Charge Coupled Devices (EMCCDs) are a variant of traditional CCD technology well suited to applications that demand high speed operation in low light conditions. On-chip signal amplification allows the sensor to effectively suppress the noise introduced by readout electronics, permitting sub-electron read noise at MHz pixel rates. The devices have been the subject of many detailed studies concerning their operation, however there has not been a study into the transfer and multiplication process within the EMCCD gain register. Such an investigation has the potential to explain certain observed performance characteristics, as well as inform further optimisations to their operation. In this study, the results from simulation of charge transfer within an EMCCD gain register element are discussed with a specific focus on the implications for serial charge transfer efficiency (CTE). The effects of operating voltage and readout speed are explored in context with typical operating conditions. It is shown that during transfer, a small portion of signal charge may become trapped at the semiconductor-insulator interface that could act to degrade the serial CTE in certain operating conditions.