Czochralski Silicon Crystal Growth in the Vertical Magnetic Field
Czochralski Silicon Crystal Growth in the Vertical Magnetic Field
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DOI：
10.1143/jjap.21.l545
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发表时间：
1982-09
影响因子：
1.5
通讯作者：
K. Hoshikawa
中科院分区：
文献类型：
--
作者：
K. Hoshikawa
在轴对称垂直磁场存在下生长具有无条纹和微观均匀掺杂剂浓度的直拉 (CZ) 硅晶体。坩埚中 3.5 千克熔融硅的热对流被强度超过 1000 Oe 的磁场成功抑制。与使用的传统横向磁场方法相比，该方法具有许多优点。
Czochralski (CZ) silicon crystals with striation free and microscopic homogeneous dopant concentrations are grown under the presence of an axially symmetric vertical magnetic field. The thermal convections of 3.5 kg of molten silicon in a crucible are successfully suppressed by a magnetic field of more than 1000 Oe in strength. Many advantages are found for the method developed in comparison with the conventional transverse magnetic field method in use.