Erratum: Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature [Phys. Rev. Appl. 2, 034005 (2014)]
Erratum: Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature [Phys. Rev. Appl. 2, 034005 (2014)]
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勘误表：室温下具有自旋 MOSFET 结构的非简并硅中的自旋输运 [物理。
DOI：
10.1103/physrevapplied.9.039901
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发表时间：
2018
影响因子：
4.6
通讯作者：
M. Shiraishi
中科院分区：
文献类型：
--
作者：
T. Sasaki;Y. Ando;M. Kameno;T. Tahara;H. Koike;T. Oikawa;Toshio Suzuki;M. Shiraishi
作者发现正文图3（a）的标题中关于减去背景信号以获得Hanle自旋信号的描述不充分[图3（a）]。详细过程如下：背景信号被定义为独立于磁化排列（即，平行和反平行）的信号。背景信号VBG（B）被计算为[VP（B）+ VAP（B）]= 2，其中VP（B）和VAP（B）是在平行和反平行磁化配置下的Hanle自旋信号，假设背景信号不变。作者
The authors identified an insufficient description in the caption of Fig. 3 (a) of the main text about subtracting a background signal to obtain the Hanle spin signals [Fig. 3 (a)]. The detailed procedure is as follows: The background signal was defined as a signal that was independent of magnetization alignments, ie, parallel and antiparallel. The background signal VBG (B) was calculated to be [VP (B)+ VAP (B)]= 2, where VP (B) and VAP (B) are Hanle spin signals under parallel and antiparallel magnetization configurations, under the assumption that the background signal is unchanged. The authors