Thin Ferromagnetic Films Deposition by Facing Target Sputtering Method
Thin Ferromagnetic Films Deposition by Facing Target Sputtering Method
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DOI：
10.15388/na.2005.10.1.15134
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发表时间：
2005-01
影响因子：
2
通讯作者：
A. Iljinas;J. Dudonis;R. Brucas;A. Meskauskas
中科院分区：
文献类型：
--
作者：
A. Iljinas;J. Dudonis;R. Brucas;A. Meskauskas
本文研究了一种专门用于铁磁阴极溅射的对靶溅射系统。研究了沉积过程中的电流-电压特性、沉积速率与放电功率、靶中心轴与基片距离以及靶间距的关系。测量了两个靶之间的磁场分布。利用FTS系统在不同温度下成功地在玻璃衬底上制备了Fe薄膜。当靶间距为70 mm，靶中心轴与衬底间距为60 mm时，薄膜的沉积速率最高，为2.2 nm/s。采用X射线衍射（XRD）和原子力显微镜（AFM）对薄膜的表面结构进行了分析。结果表明，薄膜的晶粒尺寸与沉积温度有关。
Facing targets sputtering system, constructed specially f or ferromagnetic cathode sputtering, was investigated in thi s study. The current- voltage (I-V ) characteristics, deposition rate dependence on the disch arge power, dependence on the distance between the center axis of targets and substrate, and on distance between the targets were investigated. Magnetic field distribution between two targets was measured. FTS sys tem has been used successfully to prepare Fe films on glass substrate in va rious temperatures. The highest deposition rate for this film was 2.2 nm/s when distance between targets was 70 mm and the distance between substrate and a distance from the center axis of targets was 60 mm. X-ray diffraction (XRD) and Atomic Force Microscope (AFM) were used to analyze the surface structure of Fe thin films. It was found that films crystallite sizes depend on depositio n temperature.