Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112̄0)
Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112̄0)
复制标题
磷注入 4H–SiC (112̄0) 具有显着的晶格恢复和低方块电阻
DOI：
10.1063/1.1432745
复制
发表时间：
2002
影响因子：
4
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
Y. Negoro;N. Miyamoto;T. Kimoto;H. Matsunami
研究了高剂量磷离子注入4H-碳化硅。用1×1016 cm−2剂量(800 °C)的磷离子注入4H-SiC(0001)，经1700Ω°C退火后，方块电阻达到80 /-。用卢瑟福背散射沟道光谱研究表明，4H-SiC(1120)面具有良好的再结晶特性，即使是在室温注入4H-SiC(1120)时，方块电阻也达到了110Ω/-。将800Ω°C注入到4H-SiC1120中，然后在1700 °C下进行退火，可使方块电阻进一步降低到27 /-。
High-dose ion implantation of phosphorus into 4H–SiC has been investigated. Phosphorus ion implantation with a 1×1016 cm−2 dose at 800 °C into 4H–SiC (0001) has resulted in a sheet resistance of 80 Ω/□ after annealing at 1700 °C. A similar sheet resistance of 110 Ω/□ was achieved even by room-temperature implantation when 4H–SiC (1120) was employed, owing to excellent recrystallization of this face revealed by Rutherford backscattering channeling spectroscopy. The sheet resistance could be further reduced down to 27 Ω/□ by 800 °C implantation into 4H–SiC (1120) followed by annealing at 1700 °C. 4H–SiC (1120) showed a very flat surface after annealing.