Electrical resistivity of tetramethyltetratelluronaphtalene crystal at very high pressures - examination of the condition of metallization of pi molecular crystal.
Electrical resistivity of tetramethyltetratelluronaphtalene crystal at very high pressures - examination of the condition of metallization of pi molecular crystal.
复制标题
极高压力下四甲基四碲萘晶体的电阻率 - 检查 pi 分子晶体的金属化状况。
DOI：
10.1021/ja7114025
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发表时间：
2008
影响因子：
15
通讯作者：
H. Kobayashi
中科院分区：
文献类型：
--
作者：
Hengbo Cui;Y. Okano;Biao Zhou;A. Kobayashi;H. Kobayashi
在TMTTeN晶体上用高达30 Gpa的金刚石砧座高压室进行了四探针电阻率测量。虽然室温电阻率降到很小的值(1.5×10~(-3)欧加厘米)，但晶体不能金属化。尽管单组分分子金属是由分子组成的，但在保持初始分子结构的同时，压力诱导金属化单组分PI分子晶体似乎是非常困难的。
Four-probe resistivity measurements were performed on the TMTTeN crystal by using a diamond anvil high-pressure cell up to 30 GPa. The crystal could not be metallized though the room-temperature resistivity decreased to a very small value (1.5 x 10-3 Omega cm). Although single-component molecular metals are composed of molecules, the pressure-induced metallization of a single-component pi molecular crystal while maintaining the initial molecular structure appears to be very difficult.