Photoluminescence and electrical properties of highly transparent (Bi,Eu)4Ti3O12 ferroelectric thin films on indium-tin-oxide-coated glass substrates
Photoluminescence and electrical properties of highly transparent (Bi,Eu)4Ti3O12 ferroelectric thin films on indium-tin-oxide-coated glass substrates
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DOI：
10.1063/1.2903928
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发表时间：
2008-04
影响因子：
3.2
通讯作者：
Kaibin Ruan;Xinman Chen;Tong Liang;Guangheng Wu;D. Bao
中科院分区：
文献类型：
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作者：
Kaibin Ruan;Xinman Chen;Tong Liang;Guangheng Wu;D. Bao
采用化学溶液沉积法在ITO玻璃衬底上制备了高透明（Bi，Eu）4Ti3O12（BEuT）铁电薄膜，研究了退火温度和铕离子浓度对薄膜光致发光和电学性能的影响。BEuT薄膜具有多晶铋层状钙钛矿结构，并表现出优异的光学透射率。薄膜的光致发光谱包括两个强峰，分别来自D05→F17（594nm）和D05→F27（617nm）的两个跃迁。两个峰的发射强度随着退火温度的升高而增加，这是由于薄膜结晶度的提高。在稀土掺杂钛酸铋薄膜中发现了一种不寻常的组分猝灭效应。此外，BEuT薄膜也表现出与沉积在Pt scinTi scinSiO2 scinSi衬底上的BEuT薄膜相当的铁电性质。这些...
Highly transparent (Bi,Eu)4Ti3O12 (BEuT) ferroelectric thin films were prepared on indium-tin-oxide (ITO)-coated glass substrates by using chemical solution deposition technique, and the photoluminescence and electrical properties of the thin films were investigated in terms of annealing temperature and concentration of europium ions. The BEuT thin films had a polycrystalline bismuth-layered perovskite structure and exhibited excellent optical transmittance. Photoluminescence spectra of the thin films included two strong peaks which originated from two transitions of D05→F17 (594nm) and D05→F27 (617nm). The emission intensity of two peaks increases with increasing annealing temperature due to improved crystallinity of the thin films. An unusual composition quenching effect of photoluminescence was found in the rare earth doped bismuth titanate thin films. In addition, the BEuT thin films also showed ferroelectric properties comparable to those of BEuT thin films deposited on Pt∕Ti∕SiO2∕Si substrates. Thes...