Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T
Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T
复制标题
在 40 至 290 K 和高达 9 T 的磁场中测量 4H 和 6H SiC 外延层中的霍尔散射因子
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
L. Rowland
中科院分区：
文献类型：
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作者：
G. Rutsch;R. Devaty;W. J. Choyke;D. Langer;L. Rowland
霍尔散射系数rH决定了可测霍尔系数rH与自由载流子浓度之间的关系。可靠的rH知识对于霍尔测量的精确解释和验证理论输运计算是必要的。我们测量了氮掺杂的4H和6H外延层在35 ~ 290 K和高达9 t磁场下的霍尔散射系数，4H SiC的有效霍尔散射系数在0.91 ~ 1.21之间，6H SiC的有效霍尔散射系数在0.84 ~ 1.02之间。霍尔散射因子对霍尔测量得到的掺杂活化能的影响并不大，不足以解释霍尔效应和红外吸收测量得到的掺杂活化能之间的差异。
The Hall scattering coefficient rH determines the relationship between the measurable Hall coefficient RH and the free carrier concentration. Reliable knowledge of rH is necessary for the precise interpretation of Hall measurements and to validate theoretical transport calculations. We have measured the Hall scattering factor in nitrogen doped 4H and 6H epitaxial layers from 35 to 290 K in magnetic fields up to 9 T. The effective Hall scattering factor varies between 0.91 and 1.21 in 4H SiC and 0.84 and 1.02 in 6H SiC. The effect of the Hall scattering factor on dopant activation energies obtained from Hall measurements is not large enough to explain the difference between dopant activation energies obtained from Hall effect and infrared absorption measurements.