Whiskers grown on aluminum thin films during heat treatments
Whiskers grown on aluminum thin films during heat treatments
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DOI：
10.1116/1.579983
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发表时间：
1996-07-01
期刊：
影响因子：
--
通讯作者：
Sasaki, Y
中科院分区：
文献类型：
--
作者：
Hinode, K;Homma, Y;Sasaki, Y
我们研究了热处理过程中硅衬底上铝（Al）薄膜上晶须的形成，并研究了铝薄膜性能和热处理条件对晶须成核和生长的影响。晶须被证实由于热应力而在单晶中生长，往往在被氧和氮污染的薄膜上形成。这是因为这些杂质在热处理过程中抑制了Al薄膜晶粒的生长，导致薄膜局部应力消除，从而导致晶须的形成。在热处理过程中氧化气氛可抑制晶须的成核和生长。这表明通过表面扩散破坏Al表面氧化物和/或原子重排在晶须的生长过程中具有关键作用。 (C) 1996 年美国真空协会。
We studied whisker formation on aluminum (Al) films on silicon substrates during heat treatments, and investigated the influence of the aluminum film properties and the conditions of the heat treatment on whisker nucleation and growth. The whiskers, which were confirmed to grow in single crystals due to thermal stress, tended to form on films contaminated with oxygen and nitrogen. This is because these impurities suppress the Al film grain growth during heat treatment, causing localization of the film stress relief which results in whisker formation. Oxidizing the atmosphere during heat treatment suppresses the nucleation and growth of whiskers. This indicates that breaking Al surface oxide and/or atom rearrangement through surface diffusion has a critical role in the growth process of whiskers. (C) 1996 American Vacuum Society.