Single-particle tunneling in doped graphene-insulator-graphene junctions
Single-particle tunneling in doped graphene-insulator-graphene junctions
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DOI：
10.1063/1.3686639
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发表时间：
2012-02-15
影响因子：
3.2
通讯作者：
Gu, Gong
中科院分区：
文献类型：
--
作者：
Feenstra, R. M.;Jena, Debdeep;Gu, Gong
从理论上研究了n-和p-掺杂石墨烯之间形成的隧道结的特性。评价在石墨烯的二维电子状态之间流动的单粒子隧道电流（2D-2D隧道效应）。在使两个电极的狄拉克点对准的电压偏置下，产生大的谐振电流峰值。这个峰值的幅度和宽度的计算，并讨论其用于设备。同时讨论了石墨烯电极的旋转取向和石墨烯结构的完整性对薄膜性能的影响。(C)2012年美国物理学会。[doi：10.1063/1.3686639]
The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak are computed, and its use for devices is discussed. The influences of both rotational alignment of the graphene electrodes and structural perfection of the graphene are also discussed. (C) 2012 American Institute of Physics. [doi:10.1063/1.3686639]