Electrical transport properties in indium tin oxide films prepared by electron-beam evaporation
Electrical transport properties in indium tin oxide films prepared by electron-beam evaporation
复制标题
DOI：
10.1063/1.2988901
复制
发表时间：
2008-10-01
影响因子：
3.2
通讯作者：
Zhang, D. X.
中科院分区：
文献类型：
--
作者：
Liu, X. D.;Jiang, E. Y.;Zhang, D. X.
用电子束蒸发法制备了非晶和多晶氧化铟锡薄膜。非晶薄膜表现出半导体行为，而多晶样品中观察到金属导电性。低温下多晶薄膜的导磁率为正，可以用三维弱局域化理论很好地描述。此外，电子的相位破坏率与T（3/2）成正比。将实验结果与理论分析相比较，发现电子-电子散射是薄膜相长干涉的主要破坏因素。此外，库仑相互作用是低温电导率非平凡修正的主要贡献。(C)2008年美国物理学会。[DOI：10.1063/1.2988901]
Amorphous and polycrystalline indium tin oxide films have been prepared by electron-beam evaporation method. The amorphous films exhibit semiconductor behavior, while metallic conductivity is observed in the polycrystalline samples. The magnetoconductivities of the polycrystalline films are positive at low temperatures and can be well described by the theory of three-dimensional weak-localization effect. In addition, the electron phase-breaking rate is proportional to T(3/2). Comparing the experimental results with theory, we find that the electron-electron scattering is the dominant destroyer of the constructive interference in the films. In addition, the Coulomb interaction is the main contribution to the nontrivial corrections for the electrical conductivity at low temperatures. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2988901]