Effect of annealing on grain growth and Y segregation behavior in tetragonal ZrO2 thin film
Effect of annealing on grain growth and Y segregation behavior in tetragonal ZrO2 thin film
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退火对四方ZrO2薄膜晶粒长大和Y偏析行为的影响
DOI：
10.1111/jace.18217
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发表时间：
2021
影响因子：
3.9
通讯作者：
Ikuhara Yuichi
中科院分区：
文献类型：
--
作者：
Nakade Hiroaki;Tochigi Eita;Feng Bin;Ishikawa Ryo;Ohta Hiromichi;Shibata Naoya;Ikuhara Yuichi
为了制备大颗粒的四方相Y_2O_3稳定的氧化锆样品，采用脉冲激光沉积技术在(0001)α-Al_2O_3衬底上制备了掺Y_2O_3量为3%的氧化锆薄膜，并进行了高温处理。薄膜样品在1200°C、1250°C、1300°C和1350°C的温度下进行热处理，以获得更大的晶粒尺寸，而不会出现Y偏析。用原子力显微镜、扫描电子显微镜和X射线能谱分析了薄膜的微结构和化学成分。薄膜由[111]取向的∼(100 Nm)晶面组成，晶界呈小角度倾斜。对退火后薄膜的分析表明，四方氧化锆晶须呈各向异性生长。横截面扫描电子显微镜观察表明，蓝宝石衬底的阶梯结构影响了这种晶体的生长行为。能谱分析表明，在1300℃以下，Y元素的分布基本均匀，但在1350℃时，Y元素在晶界处偏析。因此，1300℃退火态样品的晶粒尺寸最大，分布均匀。
In order to fabricate tetragonal yttria stabilized zirconia samples with large grain size, 3 mol% Y2O3doped zirconia thin films were grown on (0001) α‐Al2O3substrate by pulsed laser deposition (PLD) followed by subsequent high temperature annealing. The thin film samples were annealed at 1200°C, 1250°C, 1300°C, and 1350°C in order to obtain larger grain size without Y segregation. The microstructure and chemical composition of these annealed films were analyzed using atomic force microscopy, scanning transmission electron microscopy, and energy‐dispersive X‐ray spectroscopy. The as‐grown thin film was found to be composed of [111]‐oriented grains of ∼100 nm connected with small‐angle tilt boundaries. Based on analysis of annealed thin films, it was revealed that grain growth of tetragonal zirconia occurred anisotropically. Cross section scanning transmission electron microscopy observations revealed that such grain growth behavior is affected by the step‐terrace structures of the sapphire substrate. Energy‐dispersive X‐ray spectroscopy showed that Y was found to distribute almost uniformly below 1300°C but to segregate at the grain boundaries at 1350°C. As a conclusion, the 1300°C‐annealed sample shows the largest grain size with homogeneous Y distributions.