High-Q silicon fin bulk acoustic resonators for signal processing beyond the UHF
High-Q silicon fin bulk acoustic resonators for signal processing beyond the UHF
复制标题
高 Q 硅翅片体声谐振器，用于 UHF 以外的信号处理
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
R. Tabrizian
中科院分区：
文献类型：
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作者：
M. Ramezani;M. Ghatge;R. Tabrizian
本文首次报道了硅鳍体声波谐振器（FinBAR）技术，该技术能够在超高频（UHF）范围之外实现集成信号处理的极端扩展。在硅衬底上刻蚀出高深宽比的鳍片，并在鳍片上覆盖氮化铝薄膜，以实现具有大耦合系数（kt2）的体声谐振模式的有效机电转换。单晶硅的低声子耗散，沿着抑制侧壁换能中的压电电荷再分布损失，导致在超高频和超高频（SHF）区域中前所未有的高品质因子（Q）。展示了一个FinBAR原型，在2 GHz和6 GHz下工作于第三和第九宽度延伸模式，Q分别为4，800和2，300，k2分别为%1.2和%0.5。由此产生的f×Q为1.4×1013的记录，58的大kt2×Q以及光刻频率可扩展性证明了FinBAR实现新兴5G多频系统的SHF声学处理器的潜力。
This paper reports, for the first time, on the silicon Fin Bulk Acoustic Resonator (FinBAR) technology that enables extreme scaling of integrated signal processing beyond the ultra-high-frequency (UHF) regime. High-aspect-ratio fins are etched in silicon substrate and covered by aluminum nitride films to enable efficient electromechanical transduction of bulk acoustic resonance modes with large coupling coefficient (kt2). The low phononic dissipation of single crystal silicon, along with suppression of piezoelectric charge redistribution loss in the sidewall transduction result in unprecedentedly high quality-factors (Q) in ultra-and super-high-frequency (SHF) regimes. A prototype FinBAR is presented operating in 3rd and 9th width-extensional modes at 2 GHz and 6 GHz, with Q of 4,800 and 2,300, and k2 of %1.2 and %0.5, respectively. The resulting record f×Q of 1.4×1013, the large kt2×Q of 58, and lithographical frequency scalability demonstrate the potential of FinBARs to realize SHF acoustic processors for emerging 5G multi-frequency systems.