Basic constraints for a multibeam lithography column
Basic constraints for a multibeam lithography column
复制标题
多束光刻柱的基本约束
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
T. Chang
中科院分区：
文献类型：
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作者：
M. Mankos;S. Coyle;Andres J. Fernandez;A. Sagle;W. E. Owens;J. Sullivan;T. Chang
开发并建造了包含光电阴极和多个调制光束的50 keV多束测试台。该色谱柱可以对亚 100 nm 光刻应用的光电阴极源和电子光学进行详细评估，旨在减少电子与电子 (e-e) 相互作用。讨论了决定多束电子镜筒性能的基本约束。使用金光电阴极在 10 至 50 kV 的光束能量下获得了结果，从而可以对关键设计参数进行实验评估。
A 50 keV multibeam test bed incorporating a photocathode and multiple modulated light beams has been developed and constructed. The column allows for a detailed evaluation of both the photocathode sources and the electron optics for sub-100 nm lithography applications and is designed to reduce electron–electron (e–e) interactions. The basic constraints determining the performance of the multibeam electron column are discussed. Results have been obtained using gold photocathodes at beam energies varying from 10 to 50 kV, allowing the experimental evaluation of key design parameters.
影响因子：
2.2
作者：
G. Rempfer;W. Skoczylas;O. Griffith
通讯作者：
G. Rempfer;W. Skoczylas;O. Griffith