Weighted Mobility
Weighted Mobility
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DOI：
10.1002/adma.202001537
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发表时间：
2020-05-14
影响因子：
29.4
通讯作者：
Niu, Changning
中科院分区：
文献类型：
--
作者：
Snyder, G. Jeffrey;Snyder, Alemayouh H.;Niu, Changning
设计半导体器件需要了解载流子迁移率。通常，在迁移率大于1厘米(2)V-1 S(-1)的材料中，通常使用霍尔效应和电阻率测量来估计迁移率，这些测量通常在室温和更低的温度下执行。随着Seebeck系数和电阻率测量系统的结合，现在很容易测量加权迁移率(由电子态密度加权的电子迁移率)。介绍了一种由塞贝克系数和电阻率测量计算加权迁移率的简单方法，该方法在室温及以上的情况下都能得到很好的结果，对于低至10(-3)cm(2)V-1 S(-1)，muw=331cm2vs(M Omega Cm Rho)(T300K)-3/2[exp[|S|kB/e-2]1+exp[-5(|S|kB/e-1)]+3pi 2|S|kB/e1+exp[5(|S|kB/e-1)]这里，Mu(W)是加权迁移率，Rho是测量的电阻率T是以K表示的绝对温度，S是塞贝克系数，k(B)/e=86.3muVK-1。加权迁移率分析可以阐明材料中的电子结构和散射机制，特别有助于理解和优化热电系统。
Engineering semiconductor devices requires an understanding of charge carrier mobility. Typically, mobilities are estimated using Hall effect and electrical resistivity meausrements, which are are routinely performed at room temperature and below, in materials with mobilities greater than 1 cm(2) V-1 s(-1). With the availability of combined Seebeck coefficient and electrical resistivity measurement systems, it is now easy to measure the weighted mobility (electron mobility weighted by the density of electronic states). A simple method to calculate the weighted mobility from Seebeck coefficient and electrical resistivity measurements is introduced, which gives good results at room temperature and above, and for mobilities as low as 10(-3) cm(2) V-1 s(-1), mu w=331cm2Vs(m omega cm rho) (T300 K)-3/2[ exp[ |S|kB/e-2]1+exp[-5(|S|kB/e-1) ]+3 pi 2|S|kB/e1+exp[5(|S|kB/e-1) ] ]Here, mu(w) is the weighted mobility, rho is the electrical resistivity measured in m omega cm, T is the absolute temperature in K, S is the Seebeck coefficient, and k(B)/e = 86.3 mu V K-1. Weighted mobility analysis can elucidate the electronic structure and scattering mechanisms in materials and is particularly helpful in understanding and optimizing thermoelectric systems.