Disentangling defect-induced ferromagnetism in SiC
Disentangling defect-induced ferromagnetism in SiC
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DOI：
10.1103/physrevb.89.014417
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发表时间：
2014-01
影响因子：
3.7
通讯作者：
Yutian Wang;Lin Li;S. Prucnal;Xuliang Chen;W. Tong;Zhaorong Yang;F. Munnik;K. Potzger;W. Skorupa;S. Gemming;M. Helm;Shengqiang Zhou
中科院分区：
文献类型：
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作者：
Yutian Wang;Lin Li;S. Prucnal;Xuliang Chen;W. Tong;Zhaorong Yang;F. Munnik;K. Potzger;W. Skorupa;S. Gemming;M. Helm;Shengqiang Zhou
1.离子束物理和材料研究所，德累斯顿-罗森多夫亥姆霍兹中心（HZDR），邮政信箱510119，01314德累斯顿，德国2。北京化工大学理学院物理与电子学系，北京100029 3.中国科学院固体物理研究所材料物理重点实验室，合肥230031 4.德累斯顿工业大学，01062德累斯顿，德国和5。中国科学院合肥物质科学研究院强磁场实验室，合肥230031我们详细研究了氖离子轰击SiC单晶的磁性质。通过对未辐照和辐照SiC的磁化强度的测量，我们将SiC的磁化强度分解为顺磁、超顺磁和铁磁三种分量。铁磁性的贡献仍然远高于室温，并表现出明显的磁各向异性。我们定性地解释了由于缺陷的内在聚集倾向而导致的磁性。
1. Institute of Ion Beam Physics and Materials Research,Helmholtz-Zentrum Dresden-Rossendorf(HZDR),P.O.Box 510119,01314 Dresden,Germany2. Department of Physics and Electronics, School of Science,Beijing University of Chemical Technology, Beijing 100029, China3. Key Laboratory of Materials Physics,Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031, People’s Republic of China4. Technische Universita¨t Dresden, 01062 Dresden, Germany and5. High Magnetic Field Laboratory, Hefei Institutes of Physical Science,Chinese Academy of Sciences, Hefei 230031, People’s Republic of ChinaWe present a detailed investigation of the magnetic properties in SiC single crystals bom-barded with Neon ions. Through careful measuring the magnetization of virgin and irra-diated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagneticand ferromagnetic contributions. The ferromagnetic contribution persists well above roomtemperature and exhibits a pronounced magnetic anisotropy. We qualitatively explain themagnetic properties as a result of the intrinsic clustering tendency of defects.