Sn( ii )–carbon bond reactivity: radical generation and consumption via reactions of a stannylene with alkynes
Sn( ii )–carbon bond reactivity: radical generation and consumption via reactions of a stannylene with alkynes
复制标题
Sn( ii )–碳键反应性：通过亚锡与炔烃的反应产生自由基和消耗自由基
DOI：
10.1039/d3cc04014c
复制
发表时间：
2023
影响因子：
4.9
通讯作者：
Power, Philip P.
中科院分区：
文献类型：
--
作者：
Zou, Wenxing;Mears, Kristian L.;Fettinger, James C.;Power, Philip P.
二芳基亚锡 Sn(AriPr4)2 (AriPr4 = C6H3-2,6-(C6H3-2,6-iPr2)2) 中的热 Sn-C 裂解用于生成用于炔烃芳基甲锡烷基化的 ˙Sn(AriPr4) 和 ˙AriPr4 自由基。自由基对和 RCCR′ (R = H, R′ = Ph; R = Ph, R′ = Ph; R = H, R′ = C4H9; R = H, R′ = SiMe3) 在回流苯中生成芳基乙烯基亚锡络合物 AriPr4Sn{C(C6H5)-C(H)(AriPr4)} (1),分别为 AriPr4Sn{C(C6H5)-C(H)(C6H5)} (2) 和 AriPr4Sn{C(C4H9)-C(H)(AriPr4)} (3)。对于 HCCSiMe3，已知的二锡烯 {Sn(CCSiMe3)AriPr4}2 (4) 也是通过这种新方法生成的。
Thermal Sn–C cleavage in the diarylstannylene Sn(AriPr4)2 (AriPr4 = C6H3-2,6-(C6H3-2,6-iPr2)2) was used to generate ˙Sn(AriPr4) and ˙AriPr4 radicals for alkyne arylstannylation. The radical pair and RCCR′ (R = H, R′ = Ph; R = Ph, R′ = Ph; R = H, R′ = C4H9; R = H, R′ = SiMe3) in refluxing benzene generate the aryl vinyl stannylene complexes, AriPr4Sn{C(C6H5)-C(H)(AriPr4)} (1), AriPr4Sn{C(C6H5)-C(H)(C6H5)} (2) and AriPr4Sn{C(C4H9)-C(H)(AriPr4)} (3) respectively. For HCCSiMe3, the known distannene {Sn(CCSiMe3)AriPr4}2 (4) was also generated from this new method.