Synthesis of silicon nanoparticles with a narrow size distribution: A theoretical study
Synthesis of silicon nanoparticles with a narrow size distribution: A theoretical study
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DOI：
10.1016/j.jaerosci.2011.10.005
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发表时间：
2012-02-01
影响因子：
4.5
通讯作者：
Kraft, Markus
中科院分区：
文献类型：
--
作者：
Menz, William J.;Shekar, Shraddha;Kraft, Markus
本文研究了由硅烷热分解合成窄分布硅纳米粒子的过程。提出了两个模型，一个模型在调节烧结参数的同时解决了Swihart & Girshick（1999，Journal of Physical Chemistry B 103，64-76）的动力学机制;另一个模型在忽略凝聚和烧结的同时调节动力学和表面生长机制。应用模型来模拟热壁反应器的中心线和Kormer等人的工艺条件（2010，Journal of Aerosol Science 41，998-1007）。这两种模型显示出良好的协议与实验PSD在一系列的工艺条件。然而，据报道，当试图使用Swihart & Girshick的动力学机制，同时求解烧结参数时，得到非物理烧结过程。调整气相和表面生长过程的模型给出了更好的定量和定性与实验结果的协议。因此，建议进一步研究的动力学和非均相生长机制进行，以更好地了解在这个热壁反应器中发生的基本过程。(C)2011爱思唯尔有限公司保留所有权利。
This work presents a study of the processes involved in synthesis of narrowly distributed silicon nanoparticles from the thermal decomposition of silane. Two models are proposed, one which simultaneously solves the kinetic mechanism of Swihart & Girshick (1999, Journal of Physical Chemistry B 103, 64-76) while adjusting the sintering parameters; and another which adjusts the kinetic and surface growth mechanisms while neglecting coagulation and sintering. The models are applied to simulate the centreline of the hot-wall reactor and process conditions of Kormer et al. (2010, Journal of Aerosol Science 41, 998-1007). Both models are shown to give good agreement with experimental PSDs at a range of process conditions. However, it is reported that an unphysical sintering process is obtained when attempting to use Swihart & Girshick's kinetic mechanism, while solving for the sintering parameters. The model with adjusted gas-phase and surface growth processes gives better quantitative and qualitative agreement with experimental results. It is therefore recommended that further study into the kinetic and heterogeneous growth mechanisms be conducted in order to better understand the fundamental processes occurring in this hot-wall reactor. (C) 2011 Elsevier Ltd. All rights reserved.