Growth of GaBN ternary solutions by organometallic vapor phase epitaxy
Growth of GaBN ternary solutions by organometallic vapor phase epitaxy
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有机金属气相外延生长GaBN三元溶液
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
R. Desrosiers
中科院分区：
文献类型：
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作者：
A. Polyakov;M. Shin;M. Skowronski;D. Greve;R. Wilson;A. Govorkov;R. Desrosiers
以三甲基镓、三乙基硼（TEB）和NH3为前驱物，采用有机金属气相外延法在蓝宝石衬底上生长了Ga 1-xBxN（x = 0 ~ x = 0.07）薄膜。生长在450至1000°C的温度范围内进行。硼的存在通过X射线衍射中（0002）峰位置的偏移、通过X射线光电子能谱、二次离子质谱测量以及通过光学透射测量的带隙的变化来检测。据发现，对于所研究的范围内的组合物的带隙变化从3.4 eV的x = 0至3.63 eV的x = 0.05。在某些TEB浓度的气相中，生长速率突然下降，最有可能是因为生长中毒的增长开始增长的一个非常缓慢的富硼相。这种生长中毒的阈值TE B浓度随着生长温度的升高而降低;并且在1000°C下，结果可以掺入小于1%的B。通过在60 keV下向GaN中注入5 × 1016 cm−2 B离子，也产生了具有约7%替代硼的GaBN合金，如阴极发光光谱中的带边发射从GaN的3.4 eV偏移到GaBN的3.85 eV所证明的。
Layers of Ga1-xBxN with compositions from x = 0 to x = 0.07 were grown by organometallic vapor phase epitaxy on sapphire substrates using trimethylgallium, triethylboron (TEB) and NH3 as precursors. Growth was done in the temperature range from 450 to 1000°C. The presence of boron was detected by the shift in the (0002) peak position in x-ray diffraction, by x-ray photoelectron spectroscopy, secondary ion mass spectrometry measurements, and by the changes in the band gap as measured by optical transmission. It was found that for the studied range of compositions the band gap varied from 3.4 eV for x = 0 to 3.63 eVfor x = 0.05. At certain TEB concentrations in the gas phase, the growth rate decreased abruptly, most likely because of a growth poisoning by the onset of growth of a very slow growing B-rich phase. The threshold TEB concentration for this growth poisoning decreased with increasing growth temperature; and at 1000°C, less than 1% of B could be incorporated as a result. GaBN alloys with about 7% substitutional boron were also produced by implantation of 5 × 1016 cm−2 B ions at 60 keV into GaN, as evidenced by the shift of the band edge emission in cathodoluminescence spectra from 3.4 eV for GaN to 3.85 eV for GaBN.