Effect of Gas Pressure on the Density of Horizontally Aligned Single-Walled Carbon Nanotubes Grown on Quartz Substrates
Effect of Gas Pressure on the Density of Horizontally Aligned Single-Walled Carbon Nanotubes Grown on Quartz Substrates
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DOI：
10.1021/jp401681e
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发表时间：
2013-06-06
影响因子：
3.7
通讯作者：
Maruyama, Shigeo
中科院分区：
文献类型：
--
作者：
Inoue, Taiki;Hasegawa, Daisuke;Maruyama, Shigeo
研究了气体压力对乙醇催化化学气相沉积(CVD)法在R型和R型晶体石英衬底上生长水平取向单壁碳纳米管(SWCNTs)的影响。研究发现，水平排列的单壁碳纳米管的密度高度依赖于气压。对单壁碳纳米管生长与CVD时间关系的研究表明，在减压条件下，水平排列的单壁碳纳米管的密度持续增加10min，而在较高压力下，即使催化剂没有失活，密度也会迅速饱和。我们认为，低压CVD的孵化时间的变化是水平排列的单壁碳纳米管独立生长从而更高密度生长的关键。
We investigate the influence of gas pressure on the growth of horizontally aligned single-walled carbon nanotubes (SWCNTs) on R-cut and r-cut crystal crystal quartz substrates by alcohol catalytic chemical vapor deposition (CVD). The density of horizontally aligned SWCNTs was found to depend highly on gas pressure. A study of the SWCNT growth as a function of CVD time revealed that the density of horizontally aligned SWCNTs continued to increase for 10 min at reduced pressure, whereas the density saturated rapidly at higher pressure even though Catalysts were not deactivated. We argue that variation of incubation time for low-pressure CVD is key for independent growth of horizontally aligned SWCNTs and hence higher density growth.