Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser
Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser
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DOI：
10.1063/1.4989521
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发表时间：
2017-09-14
影响因子：
3.2
通讯作者：
Wang, C. Y.
中科院分区：
文献类型：
--
作者：
Feng, M.;Holonyak, N., Jr.;Wang, C. Y.
光学可编程器件是数字光子学的基础，是未来计算机系统中开关、逻辑门和存储器的构建模块。在这里，我们展示了光学和电学双稳态和在室温下操作的单个晶体管的开关能力。在不同的开关路径中，电子空穴的产生和复合动力学与腔光子调制的相互作用解释了电光滞后现象。开关上升和开关下降的阈值电压由基极量子阱处的光子产生速率差和由集电极电压控制的腔内光子辅助隧穿的光子吸收速率差决定。因此，晶体管激光器的电光开关是可编程的基极电流和集电极电压，和高速光学逻辑处理器的基础。由AIP出版社出版。
Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors. Published by AIP Publishing.