Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2
Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2
复制标题
DOI：
10.1063/1.3464170
复制
发表时间：
2010-09
影响因子：
4
通讯作者：
T. Hoshii;M. Yokoyama;H. Yamada;M. Hata;T. Yasuda;M. Takenaka;S. Takagi
中科院分区：
文献类型：
--
作者：
T. Hoshii;M. Yokoyama;H. Yamada;M. Hata;T. Yasuda;M. Takenaka;S. Takagi
利用电子回旋共振（ECR）等离子体对InGaAs表面进行氮化处理，并研究了其对ECR溅射SiO2/InGaAs金属氧化物半导体（MOS）电容器界面特性的影响。我们证明了InGaAs表面氮化，结合原位ECR SiO2溅射和退火，有效地降低了SiO2/InGaAs MOS电容器的界面态密度（Dit），并实现了低至2×1011 cm−2 eV−1的最小Dit值。从MOS界面的X射线光电子能谱（XPS）分析发现，MOS界面几乎没有As氧化物，氮化和随后的退火可以还原InGaAs表面的Ga氧化物，并在表面形成Ga-N键。通过对比氮化前后的C-V和XPS数据，我们认为除了Ga氧化物和As氧化物的抑制作用外，Ga-N键的形成也是Dit还原的关键。
We perform InGaAs surface nitridation using electron cyclotron resonance (ECR) plasma and study the effect on interface properties of ECR-sputtered SiO2/InGaAs metal-oxide-semiconductor (MOS) capacitors. We demonstrate that the InGaAs surface nitridation, combined with in situ ECR SiO2 sputtering and annealing, effectively reduces the interface state density (Dit) of SiO2/InGaAs MOS capacitors and realizes a minimum Dit value of as low as 2×1011 cm−2 eV−1. It is found from x-ray photoelectron spectroscopy (XPS) analyses of the MOS interfaces that the MOS interfaces have almost no As oxides and that the nitridation and the subsequent annealing can reduce Ga oxides of InGaAs surfaces and form Ga–N bonds at the surfaces. It is suggested from the comparison in C-V and XPS data with and without nitridation that the Ga–N bond formation can be a key for the reduction in Dit, in addition to the suppression of Ga oxides and As oxides.