High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
复制标题
通过分子束外延在 GaSb 衬底上高材料质量生长 AlInAsSb 薄膜
作者：
常发冉;郝瑞亭;齐通通;赵其琛;刘欣星;李勇;顾康;郭杰;王国伟;徐应强;牛智川
