One-pot microwave-assisted synthesis of porous reduced graphene oxide as an electrode material for high capacitance supercapacitor
One-pot microwave-assisted synthesis of porous reduced graphene oxide as an electrode material for high capacitance supercapacitor
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DOI：
10.1016/j.electacta.2021.138439
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发表时间：
2021-08
影响因子：
6.6
通讯作者：
Jiaojiao Ma;Yukihisa Yamamoto;Chang Su;Sushmee Badhulika;C. Fukuhara;C. Y. Kong
中科院分区：
文献类型：
--
作者：
Jiaojiao Ma;Yukihisa Yamamoto;Chang Su;Sushmee Badhulika;C. Fukuhara;C. Y. Kong
在这项研究中，我们证明了第一次，一种新的和简单的一锅微波辅助合成prGO在较短的时间内和较低的温度下，采用盐酸作为蚀刻剂。改性后的多孔还原氧化石墨烯（prGO）不仅避免了prGO层的重新堆叠，而且孔隙的存在促进了材料传输效率的提高。在本文中，物理和化学表征证实了在所获得的prGO中存在大孔/中孔，而没有任何重新堆叠的问题，这与所报道的rGO研究不同。当与所报道的rGO研究相比时，互连的大孔/中孔的协同效应提供了具有有利的电解质接触的容易的离子传输途径。此外，大孔的存在可以缩短电子/离子到电活性位点的转移路径距离，从而提高比电容。结果，合成的prGO显示出在1 A g-1下568.5 F g-1的优异的比电容，并且在较长的充电/放电循环后具有显著的容量保持率。所提出的合成方法可用于开发用于各种超级电容器装置的基于prGO的电极材料。
In this study, we demonstrate for the first time, a novel and facile one-pot microwave-assisted synthesis of prGO at shorter time period and lower temperature employing hydrochloric acid as an etching agent. Modified porous reduced graphene oxide (prGO) not only avoids the restacking of prGO layers, but also the existence of pores promotes improvement of material transport efficiency. Herein, physical and chemical characterization confirms the presence of macro/mesopores in the obtained prGO without any restacking issue, unlike reported rGO studies. The synergistic effect of the interconnected macro/mesopores provides facile ion transport pathways with the favorable electrolyte contact when compared to the reported rGO studies. In addition, the presence of macropores can shorten the transfer path distance of electrons/ions to the electroactive sites thereby enhancing specific capacitance. As a result, the synthesized prGO shows excellent specific capacitance of 568.5 F g−1at 1 A g−1with a remarkable capacity retention after longer charge/discharge cycles. The proposed synthesis approach can be employed to develop prGO based electrode material for various supercapacitor devices.