Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon Surfaces
Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon Surfaces
复制标题
晶体取向对氧化硅表面 p 型反型层迁移率、表面态密度和噪声的影响
DOI：
10.1143/jjap.8.588
复制
发表时间：
1969
影响因子：
1.5
通讯作者：
H. Hara
中科院分区：
文献类型：
--
作者：
Tai Sato;Y. Takeishi;H. Hara
本文报道了p沟道MOS晶体管在<011>和<001>区不同晶体取向的表面态密度、Nss、1/f型等效噪声电压、VN和场效应迁移率的各向异性实验结果。VN和Nss的数量彼此密切相关，并且在（811）取向表面附近都是最小的。垂直于表面的强电场下的μ FE与Nss没有明显的相关性，但明显依赖于除（111）和（100）以外的每个表面上的电流方向：μ FE在（011）平面上与[011]平行的方向上最大，而在（111）和（100）之间的平面上，μ FE⊥[011]高于μ FE//[011]。考虑到高能能带结构与低能能带结构的显著差异，迁移率各向异性可以用量子化空穴运动引起的有效质量各向异性来解释。
Experimental results are reported concerning the anisotropy of surface state density, Nss, 1/f-type equivalent noise voltaze, VN, and field effect mobilitv, µFE, in p-channel MOS transistors with various crystallographic orientations in <011> and <001> zones. The amounts of VN and Nss are strongly correlated to each other, and both appear to be smallest around (811)-oriented surfaces. µFE under strong electric field normal to the surface shows no apparent correlation to Nss, but is markedly dependent on the direction of current flow on each surface except (111) and (100): µFE is maximum in the direction parallel to [011̄] on (011) plane and µFE⊥[011̄] is higher than µFE//[011̄] on the planes between (111) and (100). The mobility anisotropy is interpreted in terms of the effective mass anisotropy caused by quantized hole motion, considering that the energy band structure at high energy remarkably differs from the one at lower energy.