Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga–Al liquid‐phase epitaxy
Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga–Al liquid‐phase epitaxy
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Ga-Al液相外延在氮化蓝宝石衬底上生长AlN层的极性反转和生长机制
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
H. Fukuyama
中科院分区：
文献类型：
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作者：
M. Adachi;M. Takasugi;M. Sugiyama;J. Iida;A. Tanaka;H. Fukuyama
之前，我们开发了Ga-Al液相外延（LPE）技术，使用Ga-Al溶液在表面氮化的蓝宝石衬底上生长AlN层。我们发现，极性反转发生在氮化蓝宝石层和LPE层之间的界面。由于氧的分压影响LPE的生长，我们目前的研究通过在供应氮气中控制氧来研究这种生长。结合前人的研究，我们根据Ga-Al液相外延的极性反转模型和生长机制对这些结果进行了讨论。氧原子被认为溶解在溶液中并被捕获在氮化蓝宝石的表面上。捕获的氧原子形成对称的八面体结构，其重置氮化蓝宝石的极性。因此，化学稳定的铝极性AlN可以在溶液中生长。
Previously, we developed Ga–Al liquid‐phase epitaxy (LPE) to grow AlN layers on a surface nitrided sapphire substrate using Ga–Al solutions. We found that polarity inversion occurs at the interface between the nitrided sapphire layer and the LPE layer. As the partial pressure of oxygen influences LPE growth, our current study investigated this growth by controlling oxygen in supplying nitrogen gas. Combined with the previous study, we discuss these results in light of the polarity inversion model and growth mechanism for the Ga–Al LPE technique. Oxygen atoms are believed to dissolve in the solution and get trapped on the surface of nitrided sapphire. The trapped oxygen atoms form a symmetrical octahedral structure, which resets the polarity of the nitrided sapphire. Consequently, chemically stable aluminum‐polar AlN can be grown in the solution.