Observation of field-induced charge carriers in high-mobility organic transistors of a thienothiophene-based small molecule: Electron spin resonance measurements
Observation of field-induced charge carriers in high-mobility organic transistors of a thienothiophene-based small molecule: Electron spin resonance measurements
复制标题
噻吩并噻吩基小分子高迁移率有机晶体管中场感应载流子的观察：电子自旋共振测量
DOI：
10.1103/physrevb.84.081306
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
S. Kuroda
中科院分区：
文献类型：
--
作者：
H. Tanaka;M. Kozuka;S. Watanabe;H. Ito;Y. Shimoi;K. Takimiya;S. Kuroda
对多晶二辛基苯并噻吩并[2,3-b]苯并噻吩 (C-BTBT) 薄膜的高迁移率有机晶体管中的场感应电荷载流子进行电子自旋共振 (ESR) 测量。 ESR 光谱的角度依赖性与最大分量 2.0110 的正交值很好地拟合，几乎平行于基底的法线方向，但倾斜 5°。结果表明，C-BTBT 分子在器件界面处具有高度有序的端对排列。 ESR 线宽表现出运动变窄至 4 K，为 C-BTBT 晶域内的高载流子迁移率提供了微观证据。
Electron spin resonance (ESR) measurements are performed on field-induced charge carriers in high-mobility organic transistors of polycrystalline dioctylbenzothieno[2,3-b]benzothiophene (C-BTBT) films. The angular dependences of the ESR spectra are well fitted by orthorhombicvalues with the largest component of2.0110 nearly parallel to the normal direction of the substrate but tilted by 5°. The results indicate a highly organized end-on alignment of C-BTBT molecules at the device interface. The ESR linewidth exhibits motional narrowing down to 4 K, providing microscopic evidence for high carrier mobilities within the crystalline domains of C-BTBT.