Improvement of soft magnetic properties and in-plane uniaxial magnetic anisotropy in FeCoAlO films fabricated by asymmetric targets

Improvement of soft magnetic properties and in-plane uniaxial magnetic anisotropy in FeCoAlO films fabricated by asymmetric targets
复制标题

DOI:
10.1007/s00339-022-05403-5
复制
发表时间:
2022-03
期刊:
Applied Physics A
影响因子:
--
通讯作者:
Fu Zheng;Z. Han;Songtian Li;Zhi Ma;Hua Gao
Fu Zheng;Z. Han;Songtian Li;Zhi Ma;Hua Gao
中科院分区:
其他
文献类型:
--
作者:
Fu Zheng;Z. Han;Songtian Li;Zhi Ma;Hua Gao

文献摘要

相似文献

利用非对称靶材制备了软磁FeCoAlO薄膜,并对其磁性能和高频特性进行了研究。随着Fe70Co30靶面上Al_2O_3晶片数目的增加,薄膜的强迫强度Hc开始下降。然后,观察到12片Al_2O_3(Hc||= 6.3Oe和Hc⊥= 1.9Oe,Hk= 110Oe)制备的薄膜的矫顽力的最小值,并且随着Al_2O_3芯片的增加,薄膜的矫顽力增大。薄膜良好的软磁性能主要来自于颗粒尺寸的细化。薄膜的高频响应也很好,即fr= 3.4千兆赫,12片Al_2O_3薄膜的低频磁导率μ‘的实部很大,约为200。对于16个氧化铝芯片,薄膜的 为3.7千兆赫,μ‘~ 为150时, 为3.0千兆赫。薄膜成分分析表明,在非对称靶制备的FeCoAlO薄膜中存在成分梯度,这导致了额外的应力诱导各向异性,从而产生了更大的面内单轴磁各向异性。这类薄膜在微波磁膜器件中具有广阔的应用前景。
Soft magnetic FeCoAlO thin films were prepared by asymmetric targets, and their magnetic properties and high-frequency characteristics were studied. The coercivityHcof the films initially decreased with increasing the number of Al2O3chips on the Fe70Co30target. Then, the minimum value of the coercivity was observed for the film prepared with 12 Al2O3chips (Hc||= 6.3 Oe andHc⊥= 1.9 Oe,Hk= 110 Oe), and as more Al2O3chips were added, the coercivity increased. The good soft magnetic properties of the films mainly came from the refinement of grain size. The films also had excellent high-frequency response, i.e.,fr= 3.4 GHz, and the real part of the permeabilityμ′at low frequency had a large value of approximately 200 for the film prepared with 12 Al2O3chips. For 16 Al2O3chips, the film hadfr= 3.7 GHz andμ′~ 150 whenf< 3.0 GHz. The analysis of film composition demonstrated that there was a composition gradient in the FeCoAlO films fabricated by asymmetric targets, which resulted in additional stress-induced anisotropy that produced greater in-plane uniaxial magnetic anisotropy. These kinds of thin films showed promise for applications in microwave magnetic film devices.