Artificial gauge potentials for neutral atoms: an application in evanescent light fields
Artificial gauge potentials for neutral atoms: an application in evanescent light fields
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DOI：
10.1364/josab.31.001322
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发表时间：
2014-06-01
影响因子：
1.9
通讯作者：
Lembessis, V. E.
中科院分区：
文献类型：
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作者：
Lembessis, V. E.
我们表明，原子与倏逝光场相互作用，产生在界面处的电介质与真空，经历人工规范电位。这些电位的大小和空间分布都取决于表征倏逝场的物理参数，最显著的是介电材料的折射率和在界面处全内反射的激光束的入射角。导出了各种倏逝光场和二能级、三能级系统的规范场。使用这样的人工规范势的操纵被困在界面处的原子指出和讨论。(C)2014年美国光学学会
We show that atoms interacting with evanescent light fields, generated at the interface of a dielectric with vacuum, experience artificial gauge potentials. Both the magnitude and the spatial distribution of these potentials depend crucially on the physical parameters that characterize the evanescent fields most notably the refractive index of the dielectric material and the angle of incidence of the laser beam totally internally reflected at the interface. Gauge fields are derived for various evanescent light fields and for both two-level and three-level systems. The use of such artificial gauge potentials for the manipulation of atoms trapped at the interfaces is pointed out and discussed. (C) 2014 Optical Society of America