Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
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化学气相沉积法高生长 4H-SiC 中的低浓度深陷阱
DOI：
10.1143/jjap.43.l969
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发表时间：
2004
影响因子：
1.5
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
K. Danno;K. Hashimoto;H. Saitoh;T. Kimoto;H. Matsunami
在SiH 4-C3 H8-H2系统中，采用水平热壁化学气相沉积（CVD）方法，在1550°C下对8°离轴4 H-SiC（0001）进行了外延生长。通过使用4.0 sccm的高SiH 4流速进行生长，获得了10-13 µm/h的高生长速率。通过采用最佳C/Si比和改进的初始生长工艺，获得了镜面状表面。用最佳C/Si比生长的外延层在低1013 cm-3范围内（n型）显示出高纯度，在低1011 cm-3范围内显示出低陷阱浓度。少数载流子寿命通过差分微波检测光电导衰减（μ-PCD）测量来研究。50 μ m厚的外延层获得了约2 μs的长载流子寿命
Epitaxial growth was performed on 8° off-axis 4H-SiC(0001) by horizontal hot-wall chemical vapor deposition (CVD) in a SiH4-C3H8-H2 system at 1550°C. High growth rates of 10–13 µm/h were attained by growth with a high SiH4 flow rate of 4.0 sccm. A mirror like surface was obtained by employing an optimum C/Si ratio and by an improved process of initial growth. The epilayers grown with an optimum C/Si ratio showed high purity in the low 1013 cm-3 range (n-type) and low trap concentrations in the low 1011 cm-3 range. Minority carrier lifetime was investigated by a differential microwave-detected photoconductance decay (µ-PCD) measurement. A long carrier lifetime of approximately 2 µs was obtained for a 50-µm-thick epilayer