Enhancing thermoelectric properties of p‑type SiGe by SiMo addition
Enhancing thermoelectric properties of p‑type SiGe by SiMo addition
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添加 SiMo 增强 p 型 SiGe 的热电性能
DOI：
10.1007/s10854-019-01245-9
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Jing Li
中科院分区：
文献类型：
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作者：
Yixiao Li;Jun Han;Qingpei Xiang;Chuanfei Zhang;Jing Li
研究了SiGe-x %SiMo复合材料在323 ~ 1173 K范围内的热电性能。由于载流子迁移率的提高，电导率随着SiMo浓度的增加而增加，当x= 20时，电导率达到1735 S cm−1的峰值。在1073 K时，SiGe - 20% simo样品的pff值最高，为2.9 mW−1m−1K−2，比SiGe的pff值高31.8%。虽然加入sio后总热导率增加，但由于MoSi2的存在增强了声子散射，晶格热导率降低。在1073 K时SiGe的ZT为0.64。在773 ~ 1073 K的高温范围内，复合材料的热应力均有所增加，有利于SiGe合金的高温应用。SiGe-20%SiMo在1073 K时zt值最高，为0.79。
The thermoelectric properties of SiGe–x%SiMo composites are studied from 323 to 1173 K. Electrical conductivity increases with SiMo concentration due to improved carrier mobility and reaches a peak of 1735 S cm−1whenx= 20. The sample SiGe–20%SiMo shows the highestPFof 2.9 mW−1m−1K−2at 1073 K, which is 31.8% higher than thePFvalue of SiGe. Although total thermal conductivities increase after SiMo addition, the lattice thermal conductivities are reduced due to strengthened phonon scattering by the presence of MoSi2. The ZT of SiGe is 0.64 at 1073 K. It is increased for all the composites in the high-temperature range between 773 and 1073 K, which is beneficial to high temperature application of SiGe alloys. SiGe–20%SiMo shows the highestZTof 0.79 at 1073 K.