Optimised atmospheric pressure CVD of monoclinic VO2 thin films with picosecond phase transition
Optimised atmospheric pressure CVD of monoclinic VO2 thin films with picosecond phase transition
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DOI：
10.1016/j.surfcoat.2015.12.090
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发表时间：
2016-02-15
影响因子：
5.4
通讯作者：
Muskens, Otto L.
中科院分区：
文献类型：
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作者：
Gaskell, Jeffrey M.;Afzaal, Mohammad;Muskens, Otto L.
采用四氯化钒（VCl 4）和水（H2O）为原料，采用常压化学气相沉积法制备了具有低粗糙度的单斜晶系氧化钒（VO 2）薄膜。在掺氟氧化锡/硼硅酸盐衬底上成功制备了具有良好透光性能的光滑VO 2薄膜。系统的研究证实，薄膜的质量（包括相位）强烈地依赖于基板，沉积时间，温度和前体的比例在该过程中。使用椭圆偏振法的光学特性揭示了一个强大的热致变色响应的薄膜的介电函数的一个大的变化，而时间分辨的泵浦-探测传输显示的皮秒性质的相变。(C)© 2016 Elsevier B. V.版权所有。
Monoclinic vanadium oxide (VO2) thin films with low roughness values were deposited and optimised by atmospheric pressure chemical vapour deposition using vanadium tetrachloride (VCl4) and water (H2O). Smooth VO2 films with good transmittance properties were successfully produced on fluorine doped tin oxide/borosilicate substrates. Systematic investigations confirmed that the quality (including phase) of films being produced strongly depended on substrate, deposition time, temperature, and precursor ratio within the process. Optical characterisation using ellipsometry revealed a strong thermochromic response of the films with a large change in the dielectric function, while time-resolved pump-probe transmission showed the picosecond nature of the phase transition. (C) 2016 Elsevier B.V. All rights reserved.