Control of Strong Light-Matter Interaction in Monolayer WS2 through Electric Field Gating
Control of Strong Light-Matter Interaction in Monolayer WS2 through Electric Field Gating
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DOI：
10.1021/acs.nanolett.8b02932
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发表时间：
2018-10-01
期刊：
影响因子：
10.8
通讯作者：
Menon, Vinod M.
中科院分区：
文献类型：
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作者：
Chakraborty, Biswanath;Gu, Jie;Menon, Vinod M.
强的光-物质耦合导致半光半物质准粒子的形成，这些准粒子具有两个系统所期望的性质，例如小质量和大相互作用。实时控制这种耦合强度是非常可取的，因为在强耦合系统中会引起诸如反射率之类的光学性质的大变化。在这里，我们证明了调制强激子光子耦合在单层WS 2通过电场诱导门在室温下。该器件由嵌入微腔结构内部的WS 2场效应晶体管组成，当单层WS 2在门控下变得更n型时，微腔结构从强耦合过渡到弱耦合。这种转变的发生是由于在静电诱导的自由载流子的存在下，由于库仑相互作用的减少而产生的激子的振子强度的减少。在室温下将固态系统从强耦合电调制到弱耦合的可能性对于实现在量子和经典机制两者中操作的低能量光电开关和调制器是高度期望的。
Strong light-matter coupling results in the formation of half-light half-matter quasiparticles that take on the desirable properties of both systems such as small mass and large interactions. Controlling this coupling strength in real-time is highly desirable due to the large change in optical properties such as reflectivity that can be induced in strongly coupled systems. Here we demonstrate modulation of strong exciton-photon coupling in a monolayer WS2 through electric field induced gating at room temperature. The device consists of a WS2 field effect transistor embedded inside a microcavity structure which transitions from strong to weak coupling when the monolayer WS2 becomes more n-type under gating. This transition occurs due to the reduction in oscillator strength of the excitons arising from decreased Coulomb interaction in the presence of electrostatically induced free carriers. The possibility to electrically modulate a solid state system at room temperature from strong to weak coupling is highly desirable for realizing low energy optoelectronic switches and modulators operating both in quantum and classical regimes.