The influence of the buffer layer architecture on transport properties for BaFe1.8Co0.2As2 films on technical substrates
The influence of the buffer layer architecture on transport properties for BaFe1.8Co0.2As2 films on technical substrates
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DOI：
10.1063/1.3696888
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发表时间：
2012-01
期刊：
影响因子：
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通讯作者：
S. Trommler;R. Huhne;J. Hanisch;E. Reich;K. Iida;S. Haindl;V. Matias;L. Schultz;B. Holzapfel
中科院分区：
文献类型：
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作者：
S. Trommler;R. Huhne;J. Hanisch;E. Reich;K. Iida;S. Haindl;V. Matias;L. Schultz;B. Holzapfel
在IBAD-MgO/Y$_2$O$_3$缓冲衬底上制备的BaFe$_{1.8}$Co$_{0.2}$As$_2$/Fe双分子层在正常状态下具有低且几乎不受温度影响的电阻，在正常-超导过渡过程中具有反常峰效应。假设带和薄膜之间的电导率随着缓冲层厚度的减小而增加，电阻器网络阵列可以充分再现这种效应。在此模型的基础上，我们评估了这一效应对临界电流密度的影响，并成功地重建了双分子层的超导跃迁。
A low and almost temperature independent resistance in the normal state and an anomalous peak effect within the normal-superconducting transition have been observed in BaFe$_{1.8}$Co$_{0.2}$As$_2$/Fe bilayers, prepared on IBAD-MgO/Y$_2$O$_3$ buffered technical substrates. A resistor network array sufficiently reproduces this effect, assuming an increase of the electrical conductance between tape and film with decreasing buffer layer thickness. Based on this model we evaluated the influence of this effect on the critical current density and successfully reconstructed the superconducting transition of the bilayer.