Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film
Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film
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DOI：
10.1063/1.4726107
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发表时间：
2012-06
影响因子：
4
通讯作者：
Y. Saito;Y. Sutou;J. Koike
中科院分区：
文献类型：
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作者：
Y. Saito;Y. Sutou;J. Koike
用于光电相变存储器的相变材料（PCMs）的快速结晶提高了其数据记录速率。在本工作中，发现Si的优先表面氧化缩短了Ge46.55Te46.55Si6.9非晶膜的成核时间。表面氧化膜的成核时间比未氧化膜的成核时间快约20%。这是由于在薄膜表面形成了不均匀的成核位点。这些结果表明，PCM的优先表面氧化是提高相变存储器件数据记录速率的有效方法。
Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge46.55Te46.55Si6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20% faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.