High-performance Si microwire photovoltaics

High-performance Si microwire photovoltaics
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DOI:
10.1039/c0ee00549e
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发表时间:
2011-03-01
影响因子:
32.5
通讯作者:
Atwater, Harry A.
Atwater, Harry A.
中科院分区:
材料科学1区
文献类型:
--
作者:
Kelzenberg, Michael D.;Turner-Evans, Daniel B.;Atwater, Harry A.

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通过气-液-固(VLS)工艺生长的晶体硅线已经成为低成本、薄膜光伏的有前途的候选材料。在这里,我们展示了具有适合高性能光伏应用的电学特性的VLS生长的硅微线,包括长的少数载流子扩散长度(L)和低表面复合速度(S
Crystalline Si wires, grown by the vapor-liquid-solid (VLS) process, have emerged as promising candidate materials for low-cost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-performance photovoltaic applications, including long minority-carrier diffusion lengths (L-n >> 30 mm) and low surface recombination velocities (S