Piezoelectricity across 2D Phase Boundaries
Piezoelectricity across 2D Phase Boundaries
复制标题
跨越二维相界的压电
DOI：
10.1002/adma.202206425
复制
发表时间：
2022
影响因子：
29.4
通讯作者：
Zhang, Fu
中科院分区：
文献类型：
--
作者：
Puthirath, Anand B.;Zhang, Xiang;Krishnamoorthy, Aravind;Xu, Rui;Samghabadi, Farnaz Safi;Moore, David C.;Lai, Jiawei;Zhang, Tianyi;Sanchez, David E.;Zhang, Fu
低维材料和金属-半导体结中的压电性最近引起了人们的关注。在此，研究了由多层碲化钼（IV）（MoTe 2）的2 H和1 T ′相制成的2D面内金属-半导体结。在2 H-1 T ′结处用压电响应力显微镜观察到强的压电响应，尽管每个单独相的多层膜是弱压电的。实验结果和密度泛函理论计算表明，在结处观察到的放大的压电响应是由于跨半导体和金属结的电荷转移导致偶极子和过量电荷密度的形成，从而允许在原子级薄材料中进行压电响应的工程。
Piezoelectricity in low‐dimensional materials and metal–semiconductor junctions has attracted recent attention. Herein, a 2D in‐plane metal–semiconductor junction made of multilayer 2H and 1T′ phases of molybdenum(IV) telluride (MoTe2) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H–1T′ junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials.
DOI：
10.1142/7439
发表时间：
2009-08
期刊：
--
影响因子：
--
作者：
P. Rodgers
通讯作者：
P. Rodgers