Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth
Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth
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DOI：
10.1063/1.4769998
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发表时间：
2012-12-10
影响因子：
4
通讯作者：
Miyao, Masanobu
中科院分区：
文献类型：
--
作者：
Matsumura, Ryo;Tojo, Yuki;Miyao, Masanobu
横向梯度SiGe绝缘体是下一代硅技术的关键结构，它使具有不同能带隙的先进器件阵列以及具有不同晶格常数的功能材料的二维集成成为可能。本文研究了在宽的条长（10-500 μ m）和冷却速率（10-19 ℃/s）范围内快速熔化生长SiGe条的偏析动力学。对于所有低冷却速率（10 ℃/s）的样品，都得到了服从Scheil方程的通用横向梯度SiGe轮廓，这使得横向SiGe轮廓的稳健设计成为可能。对于高冷却速率和长条纹长度的样品，获得了异常的两步下降轮廓。考虑增长率效应的动力学分析可以全面理解这种现象。这为实现Scheil方程之外的调制横向SiGe剖面提供了独特的工具。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4769998]
Laterally graded SiGe-on-insulator is the key-structure for next-generation Si-technology, which enables advanced device-arrays with various energy-band-gaps as well as 2-dimensional integration of functional-materials with various lattice-constants. Segregation kinetics in rapid-melting growth of SiGe stripes are investigated in wide ranges of stripe-lengths (10-500 mu m) and cooling-rates (10-19 degrees C/s). Universal laterally graded SiGe-profiles obeying Scheil-equation are obtained for all samples with low cooling-rate (10 degrees C/s), which enables robust designing of lateral-SiGe-profiles. For samples with high cooling-rates and long stripe-lengths, anomalous two-step-falling profiles are obtained. Dynamical analysis considering the growth-rate-effects enables comprehensive understanding of such phenomena. This provides the unique tool to achieve modulated lateral-SiGe-profiles beyond Scheil equation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769998]