Carbonization and transition layer effects on 3C-SiC film residual stress
Carbonization and transition layer effects on 3C-SiC film residual stress
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DOI：
10.1016/j.jcrysgro.2017.05.015
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发表时间：
2017-09-01
影响因子：
1.8
通讯作者：
La Via, F.
中科院分区：
文献类型：
--
作者：
Anzalone, R.;Litrico, G.;La Via, F.
本文对3C-SiC外延生长过程中硅表面的碳化过程和低温过渡层进行了深入的研究。结果表明，随着C/H-2比的增加，孔隙密度减小，碳化层厚度和密度增加，形貌得到改善。在碳化步骤和真实的生长过程之间的斜坡期间生长的低温过渡层进一步减少了3C-SiC/Si界面处的空隙，并显著降低了3C-SiC膜的应力。这种应力降低与膜形态的大的变化有关。没有观察到界面硅层对应力的影响。这项研究表明，3C-SiC生长过程的第一步和薄膜的性能之间的复杂联系，在应力和表面形态。残余应力对外延的加工（晶片弯曲）和质量具有重要影响。残余应力还改变薄膜结构的机械响应和/或谐振频率，并且可能降低基于MEMS的器件的性能。因此，更好地理解应力松弛机制可以提高3C-SiC器件和传感器技术的性能。(C)2017爱思唯尔B. V.保留所有权利。
In this work an extended study of the carbonization process of the silicon surface and of a low temperature transition layer in the temperature rump on the 3C-SiC epitaxial growth has been reported. It has been observed that increasing the C/H-2 ratio the voids density decreases, the thickness of the carbonization layer and the density increase and the morphology improves. The low temperature transition layer, grown during the ramp between the carbonization step and the real growth process, produce a further reduction of the voids at the 3C-SiC/Si interface and a considerable reduction of the stress of the 3C-SiC film. This stress reduction is related to a large change of the film morphology. No effect of the interface silicon layer on the stress is observed. This study has shown the complex connection between the first steps of the 3C-SiC growth process and the properties of the film in term of stress and superficial morphology. The residual stress has important implications with regard to the processing (wafer bow) and quality of the epitaxy. Residual stress also changes the mechanical response and/or the resonant frequency of the thin-film structure and may degrade the performance in MEMS-based devices. Therefore, a better understanding of the stress relaxation mechanism could improve the performances of 3C-SiC devices and sensor technologies. (C) 2017 Elsevier B.V. All rights reserved.