Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
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DOI：
10.1063/1.1480877
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发表时间：
2002-05
影响因子：
4
通讯作者：
S. Wind;J. Appenzeller;R. Martel;V. Derycke;P. Avouris
中科院分区：
文献类型：
--
作者：
S. Wind;J. Appenzeller;R. Martel;V. Derycke;P. Avouris
我们在传统的金属-氧化物-半导体场效应晶体管(MOSFET)结构中制备了单壁碳纳米管场效应晶体管(CNFET)，其导通沟道上方的栅极由一层薄的介质隔开。这些顶栅器件在接近1V的栅压下表现出优异的电特性，包括陡峭的亚阈值斜率和高的跨导--与以前报道的使用衬底作为栅极和更厚的栅介质层的CNFET相比，这是一个显著的改进。我们测量的器件性能也可以与最先进的硅器件相媲美。在p型和n型器件上都观察到了这些结果，这表明在未来的纳米电子应用中，CNFET可能会与Si MOSFET竞争。
We have fabricated single-wall carbon nanotube field-effect transistors (CNFETs) in a conventional metal–oxide–semiconductor field-effect transistor (MOSFET) structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric. These top gate devices exhibit excellent electrical characteristics, including steep subthreshold slope and high transconductance, at gate voltages close to 1 V—a significant improvement relative to previously reported CNFETs which used the substrate as a gate and a thicker gate dielectric. Our measured device performance also compares very well to state-of-the-art silicon devices. These results are observed for both p- and n-type devices, and they suggest that CNFETs may be competitive with Si MOSFETs for future nanoelectronic applications.