Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films
Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films
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DOI：
10.1088/0256-307x/22/8/058
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发表时间：
2005-08
影响因子：
3.5
通讯作者：
Xu Jin;Zhang Zi-yu;Zhangfu Yang;Lin Bi-xia;Fu Zhu-xi
中科院分区：
文献类型：
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作者：
Xu Jin;Zhang Zi-yu;Zhangfu Yang;Lin Bi-xia;Fu Zhu-xi
采用溶胶-凝胶法制备了p型Si（100）衬底上的ZnO薄膜。研究了0.002% Ag掺杂对ZnO薄膜光致发光和电流-电压（I−V）特性的影响。结果表明，在3.23 eV处，银掺杂导致近带边缘发射强度明显增加，室温下可见宽带红移显著。ZnO/p-Si异质结的I−V特性也发生了变化。这些结果可以用Ag在Ag掺杂ZnO薄膜中取代Zn来解释。
ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002 % on the photoluminescence and current-voltage (I−V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23 eV and a remarkable red shift of the visible broadband at room temperature. The I−V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.