Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode [Invited]
Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode [Invited]
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DOI：
10.1364/prj.6.000b23
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发表时间：
2018-05
影响因子：
7.6
通讯作者：
Francesco Da Ros;A. Gajda;E. Liebig;E. Silva;A. Peczek;P. Girouard;A. Mai;K. Petermann;L. Zimmermann;M. Galili;L. Oxenløwe
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文献类型：
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作者：
Francesco Da Ros;A. Gajda;E. Liebig;E. Silva;A. Peczek;P. Girouard;A. Mai;K. Petermann;L. Zimmermann;M. Galili;L. Oxenløwe
采用横向p-i-n二极管作为非线性介质的硅波导偏振分集环路实现了偏振不敏感四波混频。波长转换的7个双偏振16正交幅度调制（QAM）信号在16 GBd的光信噪比低于0.7 dB的罚款证明。由于低偏振依赖性（≤0.5 dB）和可实现的高转换效率（CE），可生成高质量的转换信号。硅中的强克尔非线性和由于反向偏置p-i-n二极管而导致的有害自由载流子吸收的减少是确保高CE水平的关键。
A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation (QAM) signals at 16 GBd is demonstrated with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence (≤0.5 dB) and the high conversion efficiency (CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due to the reverse-biased p-i-n diode are key in ensuring high CE levels.