Site occupancy, valence state, and spin state of Co ions in Co-doped In2O3 diluted magnetic semiconductor
Site occupancy, valence state, and spin state of Co ions in Co-doped In2O3 diluted magnetic semiconductor
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DOI:
10.1016/j.jmmm.2019.165358
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发表时间:
2019-11
影响因子:
2.7
通讯作者:
H. Kumagai;Y. Hara;K. Sato
中科院分区:
文献类型:
--
作者:
H. Kumagai;Y. Hara;K. Sato
This study aims to investigate the 24 d and 8 b site occupancies, valence state, and spin state of Co ions in Co-doped In 2 O 3 prepared by a chemical solution method. The Rietveld analysis of X-ray powder diffraction patterns of the products revealed that Co 2+ and Co 3+ ions tend to occupy the 24 d and 8 b sites, respectively. X-ray photoelectron spectroscopy analysis indicated that the Co 2+ ions are dominant at low-doping region (x≤ 0.044) and that Co 3+ ions appear at high-doping region (x≥ 0.052). Magnetic susceptibility measurements revealed that the effective Bohr magneton number p e f f is~ 3.8 at the low-doping region, consistent with the value for Co 2+ in the high-spin (S= 3/2) state. The p e f f decreases at the high-doping region, where Co 3+ ions appear. These results indicate that the Co 3+ ions are in the low-spin (S= 0) state or intermediate-spin (S= 1) state.